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2SC3619 |
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| Part Number | 2SC3619 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage s... |
| Features |
0mA; IB= 1mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 10mA; IB= 1mA
ICBO
Collector Cutoff Current
VCB= 240V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 4mA; VCE= 10V
hFE-2
DC Current Gain
IC= 20mA; VCE= 10V
fT
Current-Gain—Bandwidth Product IC= 20mA; VCE= 20V
COB
Output Capacitance
IE= 0; VCB= 20V, ftest= 1MHz
2SC3619
MIN TYP. MAX UNIT
1.0
V
1.0
V
1
μA
1
μA
20
30
200
50
MHz
3
pF
Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained h... |
| Document |
 2SC3619 Data Sheet
PDF 191.10KB |
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