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P9006EDG |
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| Part Number | P9006EDG |
| Manufacturer | Niko-Sem |
| Description | NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor (Preliminary) P9006EDG TO-252 Lead-Free D PRODUCT SUMMARY V(BR)DSS -60V RDS(ON) 90m ID -8A G S 1. GATE 2. DRAIN 3. SOURCE ... |
| Features |
e Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) VGS = 0V, ID = -250µA VDS = VGS, ID = -250µA VDS = 0V, VGS = ±20V VDS = -48V, VGS = 0V VDS = -44V, VGS = 0V, TJ = 125 °C VDS = -5V, VGS = -10V -32 -60 -1 -2 -3 ±250 nA 1 10 µA A V LIMITS UNIT MIN TYP MAX
OCT-21-2004 1
Free Datasheet http://www.datasheet4u.com/
NIKO-SEM
P-Channel Logic Level Enhancement
Mode Field Effect Transistor (Preliminary)
P9006EDG
TO-252 Lead-Free
Drain-Source On-State Resistance1 Forward Transconductance1
RDS(ON) gfs
VGS = -4.5V, ID... |
| Document |
 P9006EDG Data Sheet
PDF 308.74KB |
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