2SD2095 Inchange Semiconductor Silicon NPN Power Transistors Datasheet. existencias, precio

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2SD2095

Inchange Semiconductor
2SD2095
2SD2095 2SD2095
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Part Number 2SD2095
Manufacturer Inchange Semiconductor
Description ·High Breakdown Voltage- :VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation AP...
Features on Voltage IC= 3.5A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 3.5A; IB= 0.8A ICBO Collector Cutoff Current VCB= 500V; IE= 0 hFE DC Current Gain IC= 1A ; VCE= 5V VECF C-E Diode Forward Voltage IF= 5A fT Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V COB Output Capacitance IE= 0 ; VCB= 10V; ftest=1.0MHz tf Fall Time ICP= 3.5A, IB1(end)= 0.8A 2SD2095 MIN TYP. MAX UNIT 5 V 5.0 V 1.5 V 10 μA 8 2.0 V 3 MHz 105 pF 0.5 1.0 μs Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The i...

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