ICE20N170U |
Part Number | ICE20N170U |
Manufacturer | Icemos |
Description | Preliminary Data Sheet ICE20N170U ICE20N170U N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capabi... |
Features |
• Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems Product Summary ID V(BR)DSS rDS(on) Qg TA=25oC ID=250uA VGS=10V VDS=480V D 20A 600V 0.17Ω 62nC Max Min Typ Typ G S T0262 Standard Metal Heatsink 1=Gate, 2&4=Drain, 3=Source. ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS... |
Document |
ICE20N170U Data Sheet
PDF 689.61KB |
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5 | ICE20N170FP |
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