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STC5551F |
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| Part Number | STC5551F |
| Manufacturer | KODENSHI KOREA |
| Description | • General purpose amplifier • High voltage application PIN Connection Features • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE(sat)=0.5V(MAX.)... |
| Features |
• High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE(sat)=0.5V(MAX.) SOT-89 Ordering Information Type No. STC5551F N51: DEVICE CODE, Marking N51 □YWW □ : hFE rank, YWW(Y Package Code SOT-89 : Year code, WW : Weekly code) Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current (Ta=25°C) Symbol VCBO VCEO VEBO IC ICP* PC PC** TJ Tstg Ratings 180 160 6 0.6 1.2 0.5 1 150 -55~150 Unit V V V A(DC) A(Pulse) W °C °C Collector power dissipation Junction temperature Storage ... |
| Document |
 STC5551F Data Sheet
PDF 338.44KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STC503D |
KODENSHI KOREA |
NPN Silicon Transistor |
|
| 2 | STC503F |
KODENSHI KOREA |
NPN Silicon Transistor |
|
| 3 | STC5230 |
Connor-Winfield |
Synchronous Clock |
|
| 4 | STC5853 |
Semtron |
P-Channel Enhancement Mode MOSFET |
|
| 5 | STC5DNF30V |
ST Microelectronics |
Dual N-channel Power MOSFET |
|
| 6 | STC5NF20V |
ST Microelectronics |
N-CHANNEL POWER MOSFET |
|
Desde 2024. D4U Semiconductor.
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