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AP30G120ASW |
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| Part Number | AP30G120ASW |
| Manufacturer | Advanced Power Electronics |
| Description | AP30G120ASW RoHS-compliant Product Advanced Power Electronics Corp. Features ▼ High Speed Switching ▼ Low Saturation Voltage V CE(sat)=2.9V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant N-CHANNEL ... |
| Features |
▼ High Speed Switching ▼ Low Saturation Voltage V CE(sat)=2.9V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR WITH FRD.
VCES IC C G C E TO-3P G E
Parameter Rating 1200 +30 60 30 120 6 40 208 -55 to 150 -55 to 150 300
1200V 30A
Absolute Maximum Ratings
Symbol VCES VGE IC@TC=25℃ IC@TC=100℃ ICM IF@TC=100℃ IFM PD@TC=25℃ TSTG TJ TL Gate-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current1 Diode Continunous Forward Current Diode Pulse Forward Current Maximum Power Dissipation Storage Temperature Range Ope... |
| Document |
 AP30G120ASW Data Sheet
PDF 118.56KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AP30G120ASW-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 2 | AP30G120BSW-HF |
Advanced Power Electronics |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
|
| 3 | AP30G120CSW-HF |
Advanced Power Electronics |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
|
| 4 | AP30G120SW |
Advanced Power Electronics |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
|
| 5 | AP30G120W |
Advanced Power Electronics |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
|
| 6 | AP30G100W |
Advanced Power Electronics |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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