09N20 |
Part Number | 09N20 |
Manufacturer | GTM |
Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 200V 380m 8.6A The GI09N20 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance an... |
Features |
*Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic
Package Dimensions TO-251
REF. A B C D E F
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90
REF. G H J K L M
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current
1
Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25
2
Ratings 200 ±30 8.6 5.5 36 69 0.55 40 8.6 -55 ~ +150
Unit V V A A A W W... |
Document |
09N20 Data Sheet
PDF 231.88KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 09N03 |
Pan Jit International |
PJD09N03 | |
2 | 09N03LA |
Infineon Technologies |
Power Transistor | |
3 | 09N05 |
Infineon |
SPD09N05 | |
4 | 09N70P |
Advanced Power Electronics |
AP09N70P | |
5 | 09N90E |
Fuji Electric |
FMH09N90E | |
6 | 09.F5.G1B-3A00 |
KEB |
More than just a frequency inverter - Leading technique |