2SC2104 |
Part Number | 2SC2104 |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | : SILICON NPN EPITAXIAL PLANAR TYPE UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES . Output Power : P G =3W(Min.) (f=470MHz, V C c=12.6V, Pi=0.4W) . 100% Tested for Load Mismatch Stress at All Phase... |
Features |
. Output Power : P G =3W(Min.)
(f=470MHz, V C c=12.6V, Pi=0.4W) . 100% Tested for Load Mismatch Stress at All Phase
Angles with 30:1 VSWR @ V C C=15V, Pi= 0.4W, f=470MHz
Unit in mm
m%
MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL v CB0 VCEO VEBO ic
L stg
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
I CB0
Collector-Base Breakdown Voltage
v (BR)CB0
Collector-Emitter Breakdo... |
Document |
2SC2104 Data Sheet
PDF 62.69KB |
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