2SA2004 |
Part Number | 2SA2004 |
Manufacturer | Panasonic Semiconductor |
Description | Power Transistors 2SA2004 Silicon PNP epitaxial planer type Unit: mm For power amplification 9.9±0.3 4.6±0.2 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip • High forward current transfer ratio hFE • Satisf... |
Features |
φ 3.2±0.1
1.4±0.2 1.6±0.2 0.8±0.1
3.0±0.5
2.6±0.1
I Absolute Maximum Ratings TC = 25°C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 25°C Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating −60 −60 −5 −16 −8 20 2.0 150 −55 to +150 °C °C Unit V V V A A W
0.55±0.15
2.54±0.30 5.08±0.50 1 2 3
1: Base 2: Collector 3: Emitter TO-220D Package
Junction temperature Storage temperature
I Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector cutoff current Symbol IC... |
Document |
2SA2004 Data Sheet
PDF 34.49KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SA2002 |
IDC |
Silicon PNP Epitaxial Type Transistor | |
2 | 2SA2004 |
INCHANGE |
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3 | 2SA2005 |
Rohm |
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4 | 2SA2006 |
ROHM |
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5 | 2SA2009 |
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6 | 2SA201 |
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