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2SA1941 |
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| Part Number | 2SA1941 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications 2SA1941 Unit: mm • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SC5198 • Recommended for 7... |
| Features |
thin the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
1994-06 1 2013-11-01
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition ... |
| Document |
 2SA1941 Data Sheet
PDF 152.04KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | 2SA1940 |
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Silicon PNP Transistor |
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| 2 | 2SA1940 |
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| 3 | 2SA1940 |
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| 4 | 2SA1941 |
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| 5 | 2SA1941 |
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| 6 | 2SA1941 |
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Desde 2024. D4U Semiconductor.
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