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CHA5012 |
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| Part Number | CHA5012 |
| Manufacturer | United Monolithic Semiconductors |
| Description | The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including via holes through the substrate and ... |
| Features |
■ Frequency band : 9.2-10.8 GHz ■ Pout @3dB Gain compression : 29.5 dBm ■ P.A.E @3dB Gain Compression : 40 % ■ Two biasing modes: • Digital control thanks to TTL interface • Analog control thanks to biasing circuit ■ Chip size: 2.87 x 1.47 x 0.1 mm3 Pout & PAE @ 3dB gain compression and Linear Gain (Temperature 25° C) Main Characteristics Tamb = +25° C, Vc = +7.5V (Pulse 100µs 20%) Symbol Fop G P3dB Icq Parameter Operating frequency range Small signal gain Output power at 3dB compression Power supply quiescent current Min 9.2 21 23 29.5 Typ Max 10.8 Unit GHz dB dBm mA 200 ESD Protection... |
| Document |
 CHA5012 Data Sheet
PDF 532.81KB |
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| 2 | CHA5014-99F |
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Desde 2024. D4U Semiconductor.
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