FDMC86106LZ |
Part Number | FDMC86106LZ |
Manufacturer | Fairchild Semiconductor |
Description | This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain super... |
Features |
Max rDS(on) = 103 mΩ at VGS = 10 V, ID = 3.3 A Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A HBM ESD protection level > 3 KV typical (Note 4) 100% UIL Tested RoHS Compliant
General Description
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.
Application
DC - DC Conversion
Top Pin 1 S S S G
Bottom 5 6 7 8
D D D D D
4 3 2 1
G S S S
D
D
D
MLP ... |
Document |
FDMC86106LZ Data Sheet
PDF 350.07KB |
Similar Datasheet
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1 | FDMC86102 |
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2 | FDMC86102 |
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