FDMC86102 |
Part Number | FDMC86102 |
Manufacturer | Fairchild Semiconductor |
Description | This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switchi... |
Features |
Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 5 A Low Profile - 1 mm max in Power 33 100% UIL Tested RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application
DC - DC Conversion
Top
Bottom S Pin 1 S S D G D D D D D D D 5 6 7 8 4 3 2 1 G S S S
Power 33
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS Parameter Drain ... |
Document |
FDMC86102 Data Sheet
PDF 359.31KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FDMC86102 |
ON Semiconductor |
N-Channel MOSFET | |
2 | FDMC86102L |
Fairchild Semiconductor |
MOSFET | |
3 | FDMC86102L |
ON Semiconductor |
N-Channel MOSFET | |
4 | FDMC86102LZ |
Fairchild Semiconductor |
N-Channel Power Trench MOSFET | |
5 | FDMC86102LZ |
ON Semiconductor |
N-Channel MOSFET | |
6 | FDMC86106LZ |
Fairchild Semiconductor |
N-Channel Power Trench MOSFET |