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2SD2580 |
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| Part Number | 2SD2580 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA... |
| Features |
ing Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A; IB= 1.6A
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
ICES
Collector Cutoff Current
VCE= 1500V ; RBE= 0
IEBO
Emitter Cutoff Current
VEB= 4V ; IC= 0
800
V
5.0
V
1.5
V
10 μA
1.0 mA
40
130 mA
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
15
30
hFE-2
DC Current Gain
tf
Fall Time
IC= 8A ; VCE= 5V
5
IC= 6A , IB1= 1.2A ; IB2= 2.4A PW=20μs; Duty Cycle≤1%
8 0.3 μs
Notice： ISC reserves the rights to make changes of the content herein ... |
| Document |
 2SD2580 Data Sheet
PDF 219.87KB |
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Desde 2024. D4U Semiconductor.
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