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K7A801809A |
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| Part Number | K7A801809A |
| Manufacturer | Samsung semiconductor |
| Description | The K7A803609A and K7A801809A are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 256K(5... |
| Features |
• Synchronous Operation. • 2 Stage Pipelined operation with 4 Burst. • On-Chip Address Counter. • Self-Timed Write Cycle. • On-Chip Address and Control Registers. • 3.3V+0.165V/-0.165V Power Supply. • I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O • 5V Tolerant Inputs Except I/O Pins. • Byte Writable Function. • Global Write Enable Controls a full bus-width write. • Power Down State via ZZ Signal. • LBO Pin allows a choice of either a interleaved burst or a linear burst. • Three Chip Enables for simple depth expansion with No Data Contention only for TQFP... |
| Document |
 K7A801809A Data Sheet
PDF 395.05KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K7A801809B |
Samsung semiconductor |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM |
|
| 2 | K7A801800B |
Samsung semiconductor |
256K x 36 & 512K x 18 Synchronous SRAM |
|
| 3 | K7A801801M |
Samsung semiconductor |
256Kx36 & 512Kx18 Synchronous SRAM |
|
| 4 | K7A803600B |
Samsung semiconductor |
256K x 36 & 512K x 18 Synchronous SRAM |
|
| 5 | K7A803601M |
Samsung semiconductor |
256Kx36 & 512Kx18 Synchronous SRAM |
|
| 6 | K7A803609A |
Samsung semiconductor |
256Kx36 & 512Kx18 Synchronous SRAM |
|
Desde 2024. D4U Semiconductor.
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