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8S003F3 |
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| Part Number | 8S003F3 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | ....10 Block diagram... . . . . . . . .... |
| Features |
Core
• 16 MHz advanced STM8 core with Harvard architecture and 3-stage pipeline • Extended instruction set Memories • Program memory: 8 Kbyte Flash memory; data retention 20 years at 55 °C after 100 cycles • RAM: 1 Kbyte • Data memory: 128 bytes true data EEPROM; endurance up to 100 k write/erase cycles Clock, reset and supply management • 2.95 V to 5.5 V operating voltage • Flexible clock control, 4 master clock sources – Low-power crystal resonator oscillator – External clock input – Internal, user-trimmable 16 MHz RC – Internal low-power 128 kHz RC • Clock security system with clock monito... |
| Document |
 8S003F3 Data Sheet
PDF 1.20MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 8S003F3P6 |
STMicroelectronics |
8-bit MCU |
|
| 2 | 8S003K3 |
STMicroelectronics |
STM8S003K3 |
|
| 3 | 8S2TH02I |
Thinki Semiconductor |
16.0 Ampere Ceramic Insulated Dual Series Connection Ultra Fast Recovery Rectifiers |
|
| 4 | 8S2TH04I |
Thinki Semiconductor |
16.0 Ampere Ceramic Insulated Dual Series Connection Ultra Fast Recovery Rectifiers |
|
| 5 | 8S2TH06I |
Thinki Semiconductor |
16.0 Ampere Ceramic Insulated Dual Series Connection Ultra Fast Recovery Rectifiers |
|
| 6 | 8S650GXM |
GIGABYTE |
Motherboard Manual |
|
| 7 | 8S89296 |
Renesas |
LVDS Programmable Delay Line |
|
| 8 | 8S89831I |
IDT |
Differential LVPECL-To-LVPECL/ECL Fanout Buffer |
|
| 9 | 8S89831I |
Renesas |
Differential LVPECL-To-LVPECL/ECL Fanout Buffer |
|
| 10 | 8S89832I |
Renesas |
1-to-4 Differential-to-LVDS Fanout Buffer |
|
Desde 2024. D4U Semiconductor.
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