G20N50C |
Part Number | G20N50C |
Manufacturer | Vishay (https://www.vishay.com/) |
Description | www.vishay.com SiHG20N50C Vishay Siliconix Power MOSFET D TO-247 S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg max. (nC) Qgs (nC) 560 VGS = 10 V 76 21 Qgd (nC) ... |
Features |
• Low figure-of-merit Ron x Qg • 100 % avalanche tested • High peak current capability • dv/dt ruggedness • Improved Trr/Qrr • Improved gate charge Available • High power dissipations capability • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ORDERING INFORMATION Package Lead (Pb)-free TO-247AC SiHG20N50C-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage VDS Gate-source voltage VGS Continuous drain current (TJ = 150 °C) a Pulsed drain current b VGS at 10 V TC = 25 °C TC = 100 °C ... |
Document |
G20N50C Data Sheet
PDF 214.03KB |
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