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2SA1362 |
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| Part Number | 2SA1362 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1362 Low Frequency Power Amplifier Applications Power Switching Applications 2SA1362 Unit: mm • High DC current gain: hFE = 120 to 400 ... |
| Features |
n if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Marking
Start of commercial production
1983-01 1 2014-03-01
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter breakdown ... |
| Document |
 2SA1362 Data Sheet
PDF 181.03KB |
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