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FDMS86252 |
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| Part Number | FDMS86252 |
| Manufacturer | Fairchild Semiconductor |
| Description | Shielded Gate MOSFET Technology Max rDS(on) = 51 mΩ at VGS = 10 V, ID = 4.6 A Max rDS(on) = 70 mΩ at VGS = 6 V, ID = 3.9 A Advanced package and silicon combination for low rDS(on) and high ef... |
| Features |
General Description
Shielded Gate MOSFET Technology
Max rDS(on) = 51 mΩ at VGS = 10 V, ID = 4.6 A Max rDS(on) = 70 mΩ at VGS = 6 V, ID = 3.9 A Advanced package and silicon combination for low rDS(on) and
high efficiency
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
MSL1 robust package design 100% UIL tested RoHS Compliant
Application
DC-DC Conversion
Top
Bottom
Pin 1
S
... |
| Document |
 FDMS86252 Data Sheet
PDF 307.88KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDMS86250 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | FDMS86255 |
Fairchild Semiconductor |
MOSFET |
|
| 3 | FDMS86255 |
ON Semiconductor |
N-Channel MOSFET |
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| 4 | FDMS86255ET150 |
Fairchild Semiconductor |
MOSFET |
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| 5 | FDMS86200 |
ON Semiconductor |
N-Channel MOSFET |
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| 6 | FDMS86200 |
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N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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