PTFA081501F Infineon Thermally-Enhanced High Power RF LDMOS FETs Datasheet. existencias, precio

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PTFA081501F

Infineon
PTFA081501F
PTFA081501F PTFA081501F
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Part Number PTFA081501F
Manufacturer Infineon (https://www.infineon.com/)
Description The PTFA081501E and PTFA081501F are thermally-enhanced, 150-watt, internally matched GOLDMOS® FETs intended for ultralinear applications. They are characaterized for CDMA and CDMA2000 operation from 8...
Features


• Adjacent Channel Power Ratio (dBc) Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical CDMA2000 performance at 900 MHz, 28 V - Average output power = 35 W - Linear Gain = 18 dB - Efficiency = 34% - Adjacent channel power =
  –50 dBc Typical CW performance, 900 MHz, 28 V - Output power at P
  –1dB = 165 W - Efficiency = 62% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 28 V, 170 W (CW) output power 50 40 -30 -40 Drain Efficiency (%) Adj 750 kHz 30 20 -50 -60 ...

Document Datasheet PTFA081501F Data Sheet
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