TC2281 |
Part Number | TC2281 |
Manufacturer | Transcom |
Description | The TC2281 is a high performance field effect transistor housed in a ceramic micro-x package with TC1201 PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that make... |
Features |
! ! ! ! ! ! ! ! ! ! 0.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 12 dB Typical at 12 GHz 21.5 dBm Typical Power at 12 GHz 12 dB Typical Linear Power Gain at 12 GHz Breakdown Voltage : BVDGO ≥ 9 V Lg = 0.25 µm, Wg = 300 µm Tight Vp ranges control High RF input power handling capability 100 % DC Tested Micro-X Metal Ceramic Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC2281 is a high performance field effect transistor housed in a ceramic micro-x package with TC1201 PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that makes this device su... |
Document |
TC2281 Data Sheet
PDF 343.70KB |
Similar Datasheet
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2 | TC2201 |
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