NGTB30N120IHSWG |
Part Number | NGTB30N120IHSWG |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | NGTB30N120IHSWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching ap... |
Features |
a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co−packaged free wheeling diode with a low forward voltage.
Features
http://onsemi.com
• • • • • Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System Power Dissipation Optimized for Low Case Temperature in IH Cooker Application Low Gate Charge ... |
Document |
NGTB30N120IHSWG Data Sheet
PDF 232.22KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | NGTB30N120IHLWG |
ON Semiconductor |
IGBT | |
2 | NGTB30N120IHRWG |
ON Semiconductor |
IGBT | |
3 | NGTB30N120FL2WG |
ON Semiconductor |
IGBT | |
4 | NGTB30N120L2WG |
ON Semiconductor |
IGBT | |
5 | NGTB30N120LWG |
ON Semiconductor |
IGBT | |
6 | NGTB30N135IHR1WG |
ON Semiconductor |
IGBT |