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SSM6J216FE |
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| Part Number | SSM6J216FE |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | MOSFETs Silicon P-Channel MOS (U-MOS) SSM6J216FE 1. Applications • Power Management Switches 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 88.1 mΩ (max) (@V... |
| Features |
(1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 88.1 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.3 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 32.0 mΩ (max) (@VGS = -4.5 V)
3. Packaging and Pin Configuration
ES6
SSM6J216FE
1.2.5.6 : Drain 3 : Gate 4 : Source
Start of commercial production
2012-11
1
2014-03-12
Rev.3.0
SSM6J216FE
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
-12
V
Gate-source voltage
VGSS
±8
Drain current (DC)
(Note 1)... |
| Document |
 SSM6J216FE Data Sheet
PDF 215.76KB |
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