Busque con el número de pieza junto con el fabricante o la descripción
SSM6J212FE |
Click to view a larger image
| Part Number | SSM6J212FE |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | SSM6J212FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM6J212FE ○ Power Management Switch Applications • 1.5-V drive • Low ON-resistance: RDS(ON) = 94.0 mΩ (max) (@VGS = -1.... |
| Features |
e operating conditions (i.e.
Weight : 3mg ( typ. )
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on a FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Marking (Top View)
654
PQ
123
Equivalent Circuit
65... |
| Document |
 SSM6J212FE Data Sheet
PDF 207.13KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSM6J213FE |
Toshiba Semiconductor |
Silicon P-Channel MOSFET |
|
| 2 | SSM6J214FE |
Toshiba Semiconductor |
Silicon P-Channel MOSFET |
|
| 3 | SSM6J215FE |
Toshiba Semiconductor |
Silicon P-Channel MOSFET |
|
| 4 | SSM6J216FE |
Toshiba Semiconductor |
Silicon P-Channel MOSFET |
|
| 5 | SSM6J21TU |
Toshiba Semiconductor |
High Current Switching Applications |
|
| 6 | SSM6J205FE |
Toshiba Semiconductor |
High-Speed Switching Applications |
|
Desde 2024. D4U Semiconductor.
|