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BDT64A |
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| Part Number | BDT64A |
| Manufacturer | Comset Semiconductors |
| Description | SEMICONDUCTORS BDT64-A-B-C SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages... |
| Features |
T64B BDT64C
Value
Unit
IB
Base Current
-500
mA
PT
Power Dissipation
@ Tmb < 25°
125
Watts
TJ
Junction Temperature
150 °C -65 to +150
Ts
Storage Temperature range
www.DataSheet.net/
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL CHARACTERISTICS Symbol
Rthj-c
Ratings
Thermal Resistance, Junction to Case
Value
1
Unit
°C/W
26/09/2012
COMSET SEMICONDUCTORS
2|5
Datasheet pdf - http://www.DataSheet4U.co.kr/
SEMICONDUCTORS
BDT64-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
Typ
Max... |
| Document |
 BDT64A Data Sheet
PDF 161.95KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | BDT64 |
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| 2 | BDT64 |
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| 5 | BDT64B |
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