SSM3J327F |
Part Number | SSM3J327F |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | SSM3J327F TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J327F ○ Power Management Switch Applications Unit: mm • 1.5-V drive • Low ON-resistance: RDS(ON) = 242 mΩ (max) (@V... |
Features |
may cause this product to decrease in the
JEITA TOSHIBA
SC-59 2-3F1F
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Weight: 12 mg (typ.)
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on a FR4 bo... |
Document |
SSM3J327F Data Sheet
PDF 226.96KB |
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