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SSM3J321T Toshiba Semiconductor Silicon P-Channel MOSFET Datasheet


Toshiba Semiconductor
SSM3J321T
Part Number SSM3J321T
Manufacturer Toshiba (https://www.toshiba.com/) Semiconductor
Description SSM3J321T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V) SSM3J321T ○ Power Management Switch Applications ○ High-Speed Switching Applications • 1.5V drive • Low ON-resistance: Ron = 137mΩ (max) (@VGS = -1.5 V) Ron = 88mΩ (max) (@VGS = -1.8 V) Ron = 62mΩ (max) (@VGS = -2.5 V) ...
Features ificantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 0.7±0.05 TSM 1: Gate 2: Source 3: Drain JEDEC ― JEITA ― TOSHIBA 2-3S1A Weight: 10mg (typ.) Note 1: The junction temperature should not exceed 150°C during use. Note 2: Mounted on an FR4 board. (25.4...

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SSM3J321T(TE85L,F)
P채널 20V 5.2A(Ta) 700mW(Ta) 표면 실장 TSM
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