SSM3J321T |
Part Number | SSM3J321T |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | SSM3J321T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V) SSM3J321T ○ Power Management Switch Applications ○ High-Speed Switching Applications • 1.5V drive • Low ON-resistance: ... |
Features |
ificantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
0.7±0.05
TSM
1: Gate 2: Source 3: Drain
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Weight: 10mg (typ.)
Note 1: The junction temperature should not exceed 150°C during use. Note 2: Mounted on an FR4 board. (25.4... |
Document |
SSM3J321T Data Sheet
PDF 249.66KB |
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