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RJP60D0DPK |
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| Part Number | RJP60D0DPK |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Title | Silicon N-Channel IGBT |
| Features |
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding R07DS0166EJ0300 Rev.3.00 Jul 13, 2011 Outline RENESAS Package code: PRSS00... |
| Document |
 RJP60D0DPK Data Sheet
PDF 139.62KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | RJP60D0DPE |
Renesas |
N-Channel IGBT |
|
| 2 | RJP60D0DPM |
Renesas |
N-Channel IGBT |
|
| 3 | RJP60D0DPP-M0 |
Renesas Technology |
Silicon N-Channel IGBT |
|
| 4 | RJP6065DPM |
Renesas |
N-Channel IGBT |
|
| 5 | RJP6085DPK |
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|
| 6 | RJP6085DPN |
Renesas Technology |
Silicon N-Channel IGBT |
|
Desde 2024. D4U Semiconductor.
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