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RJH60F7BDPQ-A0 |
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| Part Number | RJH60F7BDPQ-A0 |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | Preliminary Datasheet RJH60F7BDPQ-A0 600V - 50A - IGBT High Speed Power Switching R07DS0677EJ0200 Rev.2.00 Nov 21, 2014 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ... |
| Features |
Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Tj = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Tj = 25°C, inductive load) Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 123 1. Gate 2. Collector G 3. Emitter 4. Collector E Absolute Maximum Ratings Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collecto... |
| Document |
 RJH60F7BDPQ-A0 Data Sheet
PDF 212.20KB |
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