Busque con el número de pieza junto con el fabricante o la descripción
RJH1CD5DPQ-E0 |
Click to view a larger image
| Part Number | RJH1CD5DPQ-E0 |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for th... |
| Features |
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C) Built-in fast recovery diode (trr = 200 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 100 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 20 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0517EJ0400 Rev.4.00 Jan 19, 2012 Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector E 1 2 3 www.DataSheet.net/ Absolute Maximum Ratings (Ta = 25°C) It... |
| Document |
 RJH1CD5DPQ-E0 Data Sheet
PDF 110.38KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | RJH1CD5DPQ-A0 |
Renesas |
High Speed Power Switching |
|
| 2 | RJH1CD6DPQ-A0 |
Renesas |
IGBT |
|
| 3 | RJH1CD6DPQ-E0 |
Renesas |
IGBT |
|
| 4 | RJH1CD7DPQ-A0 |
Renesas |
IGBT |
|
| 5 | RJH1CD7DPQ-E0 |
Renesas |
IGBT |
|
| 6 | RJH1CF4RDPQ-80 |
Renesas |
High Speed Power Switching |
|
Desde 2024. D4U Semiconductor.
|