RJH1BF7RDPQ-80 Renesas High Speed Power Switching Datasheet. existencias, precio

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RJH1BF7RDPQ-80

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RJH1BF7RDPQ-80
RJH1BF7RDPQ-80 RJH1BF7RDPQ-80
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Part Number RJH1BF7RDPQ-80
Manufacturer Renesas (https://www.renesas.com/)
Description of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for th...
Features



• Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 35 A, VGE = 15V, Tj = 25°C)
• Gate to emitter voltage rating ±30 V
• Pb-free lead plating R07DS0394EJ0100 Rev.1.00 May 16, 2011 Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector E 1 2 3 www.DataSheet.net/ Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current...

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