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Y60NM50 |
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| Part Number | Y60NM50 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resista... |
| Features |
TIC DIAGRAM
www.DataSheet.co.kr
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (l) PTOT VESD(G-S) dv/dt (1) Tstg Tj August 2002 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Gate source ESD(HBM-C=100pF, R=15KΩ) Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 500 500 ±30 60 37.8 240 560 6 4.5 15 –65 to 150 150 (1)ISD ≤60A, di/dt ≤400A/µs, V ... |
| Document |
 Y60NM50 Data Sheet
PDF 241.30KB |
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