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2SC4408 |
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| Part Number | 2SC4408 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4408 Power Amplifier Applications Power Switching Applications 2SC4408 Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC =... |
| Features |
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-10
Electrical Characteristics (Ta = 25°C)
2SC4408
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Transition freq... |
| Document |
 2SC4408 Data Sheet
PDF 114.46KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC4400 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 2 | 2SC4401 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 3 | 2SC4402 |
Sanyo Semicon Device |
NPN Transistor |
|
| 4 | 2SC4403 |
Sanyo Semicon Device |
NPN Transistor |
|
| 5 | 2SC4404 |
Sanyo Semicon Device |
NPN Transistor |
|
| 6 | 2SC4405 |
Sanyo Semicon Device |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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