RJP63F3DPP-M0 Renesas N-Channel IGBT Datasheet. existencias, precio

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RJP63F3DPP-M0

Renesas
RJP63F3DPP-M0
RJP63F3DPP-M0 RJP63F3DPP-M0
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Part Number RJP63F3DPP-M0
Manufacturer Renesas (https://www.renesas.com/)
Description of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for th...
Features




• Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 100 ns typ Low leak current ICES = 1 μA max Isolated package TO-220FL R07DS0321EJ0200 Rev.2.00 May 26, 2011 Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL) C G 1. Gate 2. Collector 3. Emitter 1 2 3 E www.DataSheet.co.kr Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Juncti...

Document Datasheet RJP63F3DPP-M0 Data Sheet
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