RJP6065DPM Renesas N-Channel IGBT Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

RJP6065DPM

Renesas
RJP6065DPM
RJP6065DPM RJP6065DPM
zoom Click to view a larger image
Part Number RJP6065DPM
Manufacturer Renesas (https://www.renesas.com/)
Description of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for th...
Features
 Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25°C)
 Gate to emitter voltage rating 30 V
 Pb-free lead plating and chip bonding R07DS0204EJ0100 Rev.1.00 Nov 19, 2010 Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C G 1. Gate 2. Collector 3. Emitter E 1 2 3 www.DataSheet.co.kr Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. ...

Document Datasheet RJP6065DPM Data Sheet
PDF 144.17KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 RJP6085DPK
Renesas Technology
Silicon N-Channel IGBT Datasheet
2 RJP6085DPN
Renesas Technology
Silicon N-Channel IGBT Datasheet
3 RJP60D0DPE
Renesas
N-Channel IGBT Datasheet
4 RJP60D0DPK
Renesas
Silicon N-Channel IGBT Datasheet
5 RJP60D0DPM
Renesas
N-Channel IGBT Datasheet
6 RJP60D0DPP-M0
Renesas Technology
Silicon N-Channel IGBT Datasheet
More datasheet from Renesas
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad