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RJP30H1DPD |
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| Part Number | RJP30H1DPD |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for th... |
| Features |
Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. R07DS0465EJ0200 Rev.2.00 Jun 15, 2011 Outline RENESAS Package code: PRSS0004ZJ-A (Package name : TO-252) 4 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) E C G 12 3 Absolute Maximum Ratings (Tc = 25°C) www.DataSheet.co.kr Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case therma... |
| Document |
 RJP30H1DPD Data Sheet
PDF 212.44KB |
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Desde 2024. D4U Semiconductor.
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