RJP30E3DPK-M0 |
Part Number | RJP30E3DPK-M0 |
Manufacturer | Renesas (https://www.renesas.com/) |
Description | of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for th... |
Features |
• • • • Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 μA max R07DS0352EJ0200 Rev.2.00 Apr 15, 2011 Outline RENESAS Package code: PRSS0004ZH-A (Package name: TO-3PSG) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) E 1 2 3 Absolute Maximum Ratings Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW ≤ 10 μ... |
Document |
RJP30E3DPK-M0 Data Sheet
PDF 213.96KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | RJP30E3DPP-M0 |
Renesas |
N-Channel Power MOSFET | |
2 | RJP30E2 |
Renesas |
N-Channel Power MOSFET | |
3 | RJP30E2DPK-M0 |
Renesas |
N-Channel Power MOSFET | |
4 | RJP30E2DPP-M0 |
Renesas |
N-Channel Power MOSFET | |
5 | RJP3053DPP |
Renesas Technology |
IGBT | |
6 | RJP3054DPP |
Renesas Technology |
IGBT |