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60N100D |
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| Part Number | 60N100D |
| Manufacturer | Fairchild Semiconductor |
| Description | Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices a... |
| Features |
• • • • High Speed Switching Low Saturation Voltage : VCE(sat) = 2.5V @ IC = 60A High Input Impedance Built-in Fast Recovery Diode Application Home Appliance, Induction Heater, IH JAR, Micro Wave Oven C G TO-264 G C E www.DataSheet.co.kr E TC = 25°C unless otherwise noted Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temper... |
| Document |
 60N100D Data Sheet
PDF 498.44KB |
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Desde 2024. D4U Semiconductor.
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