WFW13N50 |
Part Number | WFW13N50 |
Manufacturer | Winsemi |
Description | This Power MOSFET is produced using Winsemi's advancedplanar stripe,DMOS technology.This latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche cha... |
Features |
■ 13A,500V, RDS(on)(Max0.46Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 43nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advancedplanar stripe,DMOS technology.This latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast. Ab... |
Document |
WFW13N50 Data Sheet
PDF 625.20KB |
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1 | WFW10N80 |
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2 | WFW11N90 |
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3 | WFW18N50 |
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4 | WFW18N50N |
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5 | WFW18N50W |
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6 | WFW20N50 |
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