VB20120C Vishay Dual High-Voltage Trench MOS Barrier Schottky Rectifier Datasheet. existencias, precio

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VB20120C

Vishay
VB20120C
VB20120C VB20120C
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Part Number VB20120C
Manufacturer Vishay (https://www.vishay.com/)
Description New Product V20120C, VF20120C, VB20120C & VI20120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A TMBS ® TO-220AB ITO-220AB F...
Features
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package)
• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. 1 2 3 VI20120C 2 V20120C PIN 1 PIN 3 PIN 2 CAS...

Document Datasheet VB20120C Data Sheet
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