2SC3673 |
Part Number | 2SC3673 |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3673 Switching Applications Solenoid Drive Applications 2SC3673 Unit: mm • High DC current gain : hFE = 500 (min) (IC = 400 mA) • Low collector-emitt... |
Features |
bsolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
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2009-12-21
Electrical Characteristics (Ta = 25°C)
2SC3673
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capaci... |
Document |
2SC3673 Data Sheet
PDF 144.34KB |
Similar Datasheet
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