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2SC3670 |
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| Part Number | 2SC3670 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3670 Strobe Flash Applications Medium Power Amplifier Applications 2SC3670 Unit: mm • High DC current gain and excellent hFE linearity ... |
| Features |
he significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
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2009-12-21
Electrical Characteristics (Ta = 25°C)
2SC3670
Characteristics
Symbo... |
| Document |
 2SC3670 Data Sheet
PDF 123.24KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | 2SC3671 |
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Silicon NPN Transistor |
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| 2 | 2SC3672 |
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| 3 | 2SC3673 |
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Silicon NPN Transistor |
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| 4 | 2SC3675 |
Sanyo Semicon Device |
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| 5 | 2SC3675 |
INCHANGE |
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| 6 | 2SC3676 |
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