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2SC3582 |
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| Part Number | 2SC3582 |
| Manufacturer | NEC |
| Description | The 2SC3582 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Lownoise figure, high gain, and high current capability achieve ... |
| Features |
• NF • Ga 1.2 dB TYP. 12 dB TYP. @f = 1.0 GHz @f = 1.0 GHz 0.5 (0.02) 1.77 MAX. (0.069 MAX.) ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 65 20 10 1.5 65 600 150 to +150 V V V mA mW C C 1.27 (0.05) 2.54 (0.1) 1 2 3 1. Base 2. Emitter 3. Collector EIAJ : SC-43B JEDEC : TO-92 IEC : PA33 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Ga... |
| Document |
 2SC3582 Data Sheet
PDF 99.77KB |
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| 2 | 2SC3581 |
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| 3 | 2SC3582 |
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Desde 2024. D4U Semiconductor.
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