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FMV12N50ES |
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| Part Number | FMV12N50ES |
| Manufacturer | Fuji Electric |
| Description | Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximu... |
| Features |
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.7±0.5V) High avalanche durability
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220F (SLS)
Equivalent circuit schematic
Drain(D)
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Gate(G) Source(S)
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description Dr... |
| Document |
 FMV12N50ES Data Sheet
PDF 596.67KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | FMV12N50E |
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| 2 | FMV12N50E |
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Desde 2024. D4U Semiconductor.
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