CEM2187 |
Part Number | CEM2187 |
Manufacturer | CET |
Description | www.DataSheet.co.kr P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -7.6A, RDS(ON) = 22mΩ @VGS = -4.5V. RDS(ON) = 32mΩ @VGS = -2.5V. Super high dense cell design for extremely low R... |
Features |
-20V, -7.6A, RDS(ON) = 22mΩ @VGS = -4.5V. RDS(ON) = 32mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
D1 8
CEM2187
D1 7
D2 6
D2 5
SO-8 1
1 S1
2 G1
3 S2
4 G2
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -20 Units V V A A W C
±12
-7.6 -30 2.0 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Rang... |
Document |
CEM2187 Data Sheet
PDF 498.46KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | CEM2182 |
CET |
N-Channel MOSFET | |
2 | CEM2108 |
CET |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
3 | CEM2108E |
CET |
Dual N-Channel MOSFET | |
4 | CEM2133 |
CET |
P-Channel Enhancement Mode Field Effect Transistor | |
5 | CEM2163 |
CET |
P-Channel MOSFET | |
6 | CEM2192 |
CET |
Dual N-Channel MOSFET |