BSC079N10NSG |
Part Number | BSC079N10NSG |
Manufacturer | Infineon (https://www.infineon.com/) Technologies |
Description | www.DataSheet.co.kr BSC079N10NS G OptiMOS™2 Power-Transistor Features • N-channel, Normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating ... |
Features |
• N-channel, Normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max ID PG-TDSON-8 100 7.9 100 V mΩ A • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type BSC079N10NS G Package PG-TDSON-8 Marking 079N10NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=... |
Document |
BSC079N10NSG Data Sheet
PDF 501.03KB |
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