V20120SG |
Part Number | V20120SG |
Manufacturer | Vishay (https://www.vishay.com/) |
Description | www.vishay.com V20120SG, VI20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A TO-220AB TMBS ® TO-262AA K 3 2 1 V20120SG ... |
Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM 120 V IFSM VF at IF = 20 A 150 A 0.78 V TJ max. 150 °C Package TO-220AB, TO-262AA Diode variation Single MECHANICAL DATA Case: ... |
Document |
V20120SG Data Sheet
PDF 134.93KB |
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