Busque con el número de pieza junto con el fabricante o la descripción
VB20120S |
Click to view a larger image
| Part Number | VB20120S |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | www.DataSheet.co.kr New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TMBS ® TO-22... |
| Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation 2 V20120S PIN 1 PIN 2 CASE 3 1 VF20120S PIN 1 PIN 2 2 3 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. 1 PIN 3 PIN 3 TO-263AB K K TO-262A... |
| Document |
 VB20120S Data Sheet
PDF 224.25KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | VB20120C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 2 | VB20120C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |
|
| 3 | VB20120C-M3 |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 4 | VB20120S-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier |
|
| 5 | VB20120SG |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 6 | VB20120SG-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier |
|
Desde 2024. D4U Semiconductor.
|