2SC2881 |
Part Number | 2SC2881 |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2881 Voltage Amplifier Applications Power Amplifier Applications 2SC2881 Unit: mm • High voltage: VCEO = 120 V • High transition freque... |
Features |
crease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Start of commercial production
1980-07 1 2013-11-01
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off curr... |
Document |
2SC2881 Data Sheet
PDF 140.52KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SC2880 |
Toshiba Semiconductor |
Silicon NPN Triple Diffused TRANSISTOR | |
2 | 2SC2880 |
Kexin |
Transistor | |
3 | 2SC2881 |
GME |
NPN Silicon Transistor | |
4 | 2SC2881 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
5 | 2SC2881 |
HOTTECH |
NPN Transistor | |
6 | 2SC2881 |
UTC |
NPN SILICON TRANSISTOR |