2SC2669 Toshiba Semiconductor TRANSISTOR, Hoja de datos, Ficha técnica, Distribuidor, Inventario y Mejor Precio

2SC2669

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Part Number	2SC2669
Manufacturer	Toshiba (https://www.toshiba.com/) Semiconductor
Description	2SC2669 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2669 High Frequency Amplifier Applications Unit: mm · High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz) · Recommended f...
Features	IC = 2 mA VCE (sat) VBE IC = 10 mA, IB = 1 mA IC = 10 mA, IB = 1 mA fT Cob Cc･rbb’ Gpe VCE = 10 V, IC = 1 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IE = -1 mA, f = 30 MHz VCC = 6 V, IE = -1 mA, f = 10.7 MHz (Figure 1) Note: hFE classification R: 40~80, O: 70~140, Y: 120~240 Min Typ. Max Unit ¾ ¾ 0.1 mA ¾ ¾ 1.0 mA 40 ¾ 240 ¾ ¾ 0.4 V ¾ ¾ 1.0 V 100 ¾ ¾ MHz ¾ 2.0 3.2 pF ¾ ¾ 50 ps 27 30 33 dB 1 2003-03-27 2SC2669 Figure 1 Gpe Test Circuit Y Parameters (typ.) (1) (common emitter f = 455 kHz, Ta = 25°C) Characteristics Symbol 2SC2669-R Collector-emitter voltage Emitter curren...
Document	2SC2669 Data Sheet PDF 291.14KB

No.	Parte #	Fabricante	Descripción
1	2SC2660	SavantIC	SILICON POWER TRANSISTOR
2	2SC2660	INCHANGE	NPN Transistor
3	2SC2660A	SavantIC	SILICON POWER TRANSISTOR
4	2SC2665	Inchange Semiconductor	Silicon NPN Power Transistor
5	2SC2668	Toshiba Semiconductor	Silicon NPN Transistor
6	2SC2668	SeCoS	NPN Plastic-Encapsulated Transistor